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By C Gleitzer; et al

Content material: Mixed-valence iron oxides / C. Gleitzer, J.B. Goodenough -- another method of non-molecular crystal buildings with emphasis at the preparations of cations / M. O'Keefe, B.G. Hyde -- Redox reactions of sulphur-containing amino-acid residues in proteins and metalloproteins, an XPS learn / U. Weser -- writer index, volumes 1-61

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This latter reduction causes the energy A of Fig. 3 to be lowered at the FeA iron nearest-neighbor to a C ~ + ion, and as the number of nearest-neighbor C ~ ÷ ions increases, Fe 2+ ions become stabilized. Thus for larger x the local chemical inhomogeneities tend to produce, in this case, Fe~+ ions in Cr3÷-rich regions and Fe3A+ ions in C~÷-poor regions. The first indication that this might be the case comes from extreme deviations from V6gard's law, the a0 vs x plot indicating four distinct linear regions of widely different slope~31, t32), see Fig.

504. 2Mno. sGao . 4+ Lotgering and Van Diepen 191) were able to demonstrate convincingly that reaction (32) holds for the B sites as well as the A sites. 3 eV for small-polaron Mn a+ holes t91). The Mn~+ ion is a strong Jahn-Teller ion (configuration 5Eg), so the holes in the Mn3+/2+: 3 d 5 band form more stable small polarons. (d) CuxFe3-x04. 0, which can be expected to contain the mixed valences Cu 2+/+ because of the reaction Fe 2+ + Cu2+---~ Fe 3+ + Cu + (33) Mixed-Valence Iron Oxides 45 Whereas the Cu 2+ ion does not compete strongly with Fe 3t ions for the A sites, the Cu ÷ ion does.

512°); several ordered arrangements are possible depending on the thermal treatment m). The stronger (sp 3) covalence at an FeaA÷ ion displaces the lower-valent Li ÷ ion to an octahedral site. 5) has a high Curie temperature and can be fabricated so as to give a square hysteresis loop satisfactory for digital-computer "memory" cores. In this application, the dielectric losses connected with the presence of mobile charge carders can cause a dramatic loss in core quality. The mobile carriers may be introduced by 34 C.

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